Contact Us

Would you like to talk to us?

    XBn and XBp infrared detectors

    XBn and XBp barrier detectors grown from III-V materials on GaSb substrates have recently been shown to exhibit a low diffusion limited dark current and a high quantum efficiency (QE). Two important examples are InAsSb/AlSbAs based XBn devices with a cut-off wavelength of AC ~ 4.1µm, and InAs/GaSb type II superlattice (T2SL) based XBp devices, with AC ~ 9.5µm. The former exhibit background limited performance (BLIP) at F/3 up to nearly 200 K, which is a much higher temperature than observed in standard generation-recombination (G-R) limited devices such as InSb photodiodes, operating in the same Mid Wave IR (MWIR) atmospheric...
    01011101010100010100111000010100010011010101100001001100010111100101011001001110010101110101110100010100010100100101110000010100010101110101100001011101000101000100101001011111010010100101001001010101010010100100101101010101010011100001010001001111010110000101101100010100010011110101111001011011010111010101000101001110010110110001010001011111010100100100111001100000010100100101011101010000
    • P.C. Klipstein

    To access the article & files, enter your details:

      Related Articles

      SCD has gained worldwide recognition of its innovative and high quality products; its revolutionary methods enable creative approaches to meeting the challenging requirements of space imaging


      Please enter your request to start search!