Semi-Conductor Devices' long wave infrared 640 ×512/15μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield, for an operability...
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