Minority Carrier Lifetime in Type-II Superlattice Devices

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

The minority carrier lifetime in p-type InAs/GaSb type II superlattices (T2SLs) is quite short, typically in the region of tens of nanoseconds. In spite of this, T2SLs are becoming a viable alternative to Mercury Cadmium Telluride as the sensing material of choice for high end MWIR and LWIR infrared detectors. For example, SCD now manufactures a 640 × 512 format, 15 μm pitch LWIR focal plane array detector, with a quantum efficiency close to 50%, a pixel operability of >99.5%, and a dark current only about one order of magnitude larger than the state of the art Rule 07 value....

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P. C. Klipstein
Y. Benny
S. Gliksman
A Glozman
E. Hojman
O. Klin
L. Langof
I. Lukomsky
I. Marderfeld
M. Nitzani
N. Snapi
E. Weiss

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Minority carrier lifetime and diffusion length in type II superlattice barrier devices

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Type-II superlattice detector for long-wave infrared imaging

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